Memristor Crossbar Circuit for Ternary Content?Addressable Memory with Fine?Tuning Operation

Memristor-based ternary content-addressable memory (TCAM) has emerged as an alternative to conventional static random-access (SRAM)-based TCAM because of its high-density integration and zero-static energy consumption. Herein, 0T2R operation on a 32 × passive memristor crossbar circuit is experimentally verified. The effective margin, which the difference between match case 1-bit mismatch case, improved through precise tuning operations. Moreover, number bits cases can be accurately detected thanks linear relationship match-line current. In addition, nonideal effects in array including dynamic voltage drop sneak current are analyzed SPICE studies. These results indicate that proposed operating conditions ensure stable larger arrays.